Abstract
Accumulation of radiation damage and associated mechanical stresses in diamonds irradiated with 167 MeV Xe ions to fluences 1.0 × 1010 ÷ 8.15 × 1014 cm−2 have been studied using confocal Raman spectroscopy. The spectra were measured in a backscattering geometry across the irradiated layer by scanning the edge of single crystalline synthetic samples with nitrogen concentration 3 ÷ 5 ppm. All spectra were recorded at room temperature. Parameters of the 1332 cm−1 first-order Raman line – the FWHM and peak position, studied as function of Xe ion fluence, were used to characterize the structural disorder and mechanical stress level.
Highlights
Raman excitation in diamond is usually accompanied by photoluminescence (PL) and both Raman and PL spectra parameters are very sensitive to structural damage [1,2]
For the high energy implantation the boundary of damaged layer is located beyond tens of micrometres from the surface due to radiation damage produced in elastic collisions in the end of the ion range
Earlier studies of the depth distribution of impurities/defects in diamond crystals irradiated by high energy ions [7] were done using precision removal of thin layers of superhard material and utilizing PL the technique with fixed excitation and registration parameters [15]
Summary
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