Abstract
Heavily boron doped nanocrystalline diamond films grown on glass substrates by the method of plasma-chemical deposition, were investigated using Raman spectroscopy. Analysis of the spectra showed both the phonon confinement effect in nanocrystalline grains and Fano interference effect due to the contribution of electron Raman scattering in heavily doped p-type diamond films. The increase of boron concentration led to decrease of the size of crystalline diamond grains. The films are semitransparent and have good conductivity, so that it can be used as transparent electrodes in giant-scale electronics and optoelectronics.
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