Abstract
Raman spectra of realistic SiGe superlattices with disordered interface layers are calculated. The superlattice structure is simulated by a great cluster of atoms. The Raman spectrum is calculated using short-range interaction models and applying the recursion method. The relaxation of quantum effects in the presence of disordered interface layers and the appearance of alloy contributions to the Raman spectra are discussed for a series of SiGe superlattices with increasing width of the disordered interface region.
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