Abstract
Measurements of Raman scattering were performed on GaAs-In x Ga 1− x As strained-layer superlattices, grown by molecular beam epitaxy, with lattice periods ranging from 30 ∼ 250 Å and In concentrations x, 0.22 and 0.37. Only one GaAs-like longitudinal optical phonon peak was observed in each strained-layer superlattice, in contrast to the well-known result that two peaks were observed in GaAs-Al x Ga 1− x As superlattices. The GaAs-like phonon frequencies shifted from those of bulk GaAs to those of bulk In x Ga 1− x As alloys as the ratio of the one-layer thickness of In x Ga 1− x As to the lattice period increases from zero to one. We conclude that the GaAs-like phonon mode is a uniform mode of the whole strained-layer superlattice and the phonon frequency is determined by the averaged In concentration.
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