Abstract

We report photoluminescence and Raman scattering measurements of periodically δ-doped Si : GaAs. The spectra of short-period structures are similar to those of uniformly doped material, but new lines appear in the Raman spectra of longer-period structures that arise from inter-subband transitions between confined electron levels in a single δ-layer or between minibands in the δ-doping superlattice.

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