Abstract
Measurements of the line shape of the silicon optic mode in boron-implanted ruby-laser-annealed silicon were analyzed assuming a Fano-type interaction between the discrete optic mode and the continuous valence band states. The results yielded a utilization coefficient of 0.89±0.09 for the boron impurities. Measurements of the ratio of the intensity of the boron local mode to that of the silicon optic mode as a function of excitation wavelength are consistent with the conclusion of other workers that laser annealing is more effective than thermal annealing in reducing lattice damage.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
