Abstract
We report a Raman scattering determination of the energy difference EΓ−L between the Γ conduction-band minimum and the L valley minima in n-type Ga1−xInxAsySb1−y lattice matched to GaSb (x=0.15, y=0.13). A frequency downshift in the L+ phonon–plasmon coupled mode is observed between 80 K and room temperature that is attributed to electron transfer from the Γ to the L valleys. We use the L+ frequency shift to evaluate EΓ−L by performing Lindhard–Mermin L+ line-shape fits for different EΓ−L values. The EΓ−L value increases with electron concentration due to band gap renormalization. A value EΓ−L=154 meV is derived for intrinsic material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
