Abstract
AbstractSummary: The polarized Raman spectra of ion‐beam synthesized Mg2Si, embedded in (001) and (111) Si substrates were studied. The relative intensities of the F2g mode measured in several exact scattering configurations are compared with those calculated under the condition for minimum mismatch between the Si and Mg2Si lattices. A conclusion for the orientational growth of the Mg2Si phase in Si is drawn.The matching of the (111) Si and (111) Mg2Si planes.imageThe matching of the (111) Si and (111) Mg2Si planes.
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