Abstract
Cd1−xMnxTe films (thickness ∼0.5 μm, x=0.10–0.37) have been grown by metalorganic chemical vapor deposition on commercial GaAs and glass substrates with and without buffer layers of CdTe and CdS. Raman scattering shows the films to be of high quality, despite the large film-substrate lattice mismatch. CdTe-like and MnTe-like phonon lines are sharp and strong in first and second order with widths ≤10 cm−1, and clearly appear in combinations up to fourth order. Raman and photoluminescence analysis also establish an optimum growth temperature and limits on the fraction of Mn.
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