Abstract
We have comprehensively investigated low temperature Raman and photoluminescence (PL) spectra of gas source MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region which are enhanced by resonant excitation of yellow luminescence transitions. They are attributed to the electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 94 cm−1 may be caused by pseudo-local vibration modes related to defects involved in yellow luminescence transitions. The PL spectra are measured in dependence on temperature and excitation intensity. The correlation with residual impurities in GaN is discussed.
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