Abstract
GaN:Eu3+/Er3+ films were prepared via ion implantation method. All samples were investigated by Raman scattering and Cathodoluminescence (CL) spectra. Six new Raman peaks were introduced by Er3+ ions implantation at 181, 214, 238, 846, 880 and 911 cm−1, respectively. In addition, the intensity ratio of 560 nm with respect to 539 nm of Er3+ ions and the intensity ratio of 623 nm (belong to Eu3+) to 539 nm (belong to Er3+) both decrease with the Er3+ ions implantation concentration, which proved the existence of the energy transfer from Eu3+ to Er3+ by dipole-dipole interaction in GaN host. Finally, the chromaticity coordinate and color correlated temperatures could be changed through adjusting the ratio of Er3+ concentration with respect to Eu3+ concentration.
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