Abstract
Raman piezospectroscopy of high quality 6H-SiC crystals is presented. The crystals used in experiments were grown by the seeded physical vapor transport method. Uniaxial stress up to 0.9 MPa, obtained using a spring apparatus, was applied along [11–20] and [10–10] directions. It was found that the application of uniaxial stress led to different energy shifts of the observed phonon excitations in the investigated 6H-SiC crystals. The obtained pressure coefficients vary in the range 0.98–5.5 cm−1 GPa−1 for different transverse optical phonon modes. For longitudinal optic phonon modes pressure coefficients in the range 1.6–3.6 cm−1 GPa−1 were found. The data obtained could be useful in evaluation of local strain fields in SiC based structures and devices including epitaxial graphene.
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