Abstract
Structural and optical properties of SiO2 (600 nm)/Si films successively implanted with two types of ions (Zn and Se) or three types of ions (Zn, Se and S) and afterwards annealed at 900 °C were investigated. RS, PL and TEM methods were used to characterize A2B6 nanocrystals synthesized in SiO2 matrix. The Raman spectra recorded using an excitation with two different laser lines (355 and 473 nm) have shown the formation of ZnSe nanocrystals after a double implantation of Zn and Se ions, while ZnSxSe1−x nanoclusters have been synthesized after a triple implantation of Zn, Se and S ions. Based on Raman spectra recorded with blue and UV excitations, the possible sulfur content (x ≈ 0.4) has been estimated for synthesized ternary alloy. The intensive PL bands for SiO2 films implanted with (Zn, Se, S) and (Zn, Se) were detected in the blue and red spectral ranges, respectively.
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