Abstract
ABSTRACTWe study the composition, stress and structure variations across periodic surface undulations produced by pulsed laser illumination of semiconductors, by explosive crystallization of amorphous films, and by laser-assisted CVD. These variations are mapped out with a one micron spatial resolution using a Raman microprobe. Similarities and differences between the three cases are pointed out. These results are also compared to those obtained by deliberately exposing the sample to interfering beams.
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