Abstract
Electron-hole pairs, optically excited in the continuous regime, were studied in both nominally undoped and Fe-doped InP substrates using the Raman technique. Different results were obtained depending on whether the material was Fe doped or not. Undoped samples show a pronounced phonon-plasmon coupling effect, whereas Fe-doped specimens do not reveal such behaviour. From modelling, the stationary photocarrier concentration is evaluated as a function of critical parameters such as lifetime, surface recombination velocity or atomic Fe concentration. By comparison with data obtained under different illumination conditions, it is concluded that undoped (n-type) InP is characterized by a rather low surface recombination velocity ( S < 10 4 cm s −1 ) and a (bulk) pair lifetime of several tens of nanoseconds. In contrast, for Fe-doped (semi-insulating) material the pair lifetime is found to be lower than 1 ns, while the photocarrier density is shown to depend on the Fe concentration with a critical value arouund a few 10 16 cm −3.
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