Abstract
Room temperature Raman measurements on a series of molecular beam epitaxy grown In0.53Ga0.47−xAlxAs epilayers lattice matched to InP substrates have been carried out for the composition range 0⩽x⩽0.08. This low Al composition range is important for tailoring the well gap energy in communication device fabrication. The Raman data show three-mode phonon behavior for films with Al concentrations as low as x=0.03. In addition to detecting the fundamental one-phonon scattering processes, overtone, and combinations of the GaAs-like and AlAs-like optic phonon modes are recorded. These are then used to determine the composition dependent phonon mode shifts. By comparing the separate estimates of the free carrier band-gap energy using low temperature absorption and photoluminescence measurements, unintentional doping of the epilayers by the substrate is revealed.
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