Abstract
First- and second-order Raman scattering by MOVPE grown In x Ga 1- x As ( x < 0.53) alloys is investigated to determine the crystalline structure. The first-order allowed LO phonon line shows asymmetric broadening which is explained quantitatively on the basis of a “spatial correlation” model. The correlation length, related to the average size of the ordered sublattice in these alloys, is estimated, which shows a dependence on alloy composition and growth technique. The second-order optical scattering is highly sensitive to disorder present in the sample and this has been used to estimate the correlation on the scale of the lattice constant. Our results indicate a departure from the purely random distribution of atoms in the In x Ga 1- x As alloy and are in agreement with the EXAFS data.
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