Abstract
Raman scattering of ${\mathrm{Zn}}_{1\ensuremath{-}x}{\mathrm{Be}}_{x}\mathrm{Se}$ epifilms grown by molecular beam epitaxy on GaAs (001) substrates has been investigated. The effect of compositional disorder was obtained by analyzing the broadening and asymmetry of the first-order LO mode. It is found that the Raman line shapes for the ZnSe-like LO mode in ${\mathrm{Zn}}_{1\ensuremath{-}x}{\mathrm{Be}}_{x}\mathrm{Se}$ alloys can be well described by the spatial correlation model. We have also analyzed comparatively the anharmonic effects due to temperature and compositional fluctuations in ZnSe and ZnBeSe systems, using temperature-dependent Raman-scattering measurements. It is found that the anharmonicity is higher for ZnBeSe alloys than ZnSe and it increases with compositional disorder. Therefore, both temperature- and compositional-fluctuation-induced anharmonicities can introduce changes in the linewidth, line center position, and anharmonic decay time of the first-order optical phonons in ${\mathrm{Zn}}_{1\ensuremath{-}x}{\mathrm{Be}}_{x}\mathrm{Se}$ alloys.
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