Abstract
Effects of SiNx deposition on undoped Ga0.47In0.53As bulk layer grown on InP substrate were investigated using Raman spectroscopy. No Raman shift as a result of strain induced from the dielectric deposition was observed in the Ga0.47In0.53As material, whatever the thickness and the temperature deposition used in the technological process. Some changes in the Raman spectra due to surface disorder effects were evidenced for the Ga0.47In0.53As samples passivated at 300 °C. These effects were confirmed by photocarrier-assisted experiments. Copyright © 1999 John Wiley & Sons, Ltd.
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