Abstract
Ge1-xSnx alloys present important optoelectronic properties due to the possibility for obtain a direct and tunable energy gap group IV semiconductor. Ge1-xSnx alloys were grown on different substrates by using a R. F. Magnetron Sputtering. Raman spectroscopy and HRXRD were used in order to determinate the structural properties of these alloys. We determined a linear shift of the Raman peak that depends directly on the Sn concentration of the alloy. We also find that the Raman peak has an asymmetrical shape attributed to a small crystal size. In this work we present the characterization of the Raman peaks by fitting a Space Correlation Model. We obtain a strong correlation among FWHM, asymmetrical shape and Sn concentration of the alloys. Keywords: HRXRD, Raman.
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