Abstract
The distribution of Ge composition in an individual Si1−xGex alloy nanowire (SiGeNW) grown by the vapor liquid solid (VLS) process was studied by micro-Raman spectroscopy by changing the measurement position from the catalyst side to the substrate side. The Si–Si mode in Raman spectra were found to split into two peaks and the intensity ratio as well as the wavenumbers of the two peaks depended on the measurement position. The Raman data revealed that SiGeNWs have a core-shell structure with a low-Ge composition core grown by the VLS process covered with a high-Ge composition shell grown by the conformal deposition.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
