Abstract
ABSTRACTRoom temperature Raman scattering measurements performed on undoped GaN films indicate that high crystalline quality wurtzite material has been deposited on the basal plane of sapphire. Photoluminescence study of these films show that thicker films (t > 4μm) are homogeneous along the growth direction. The PL spectra of Mg-doped films are dominated by an intense emission band around 3.1 eV associated with recombination processes involving donor-acceptor pairs.
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