Raman and Photoluminescence Spectroscopic Studies on Structural Disorder in Oxygen Deficient Gd2Ti2O7‐δ Single Crystals

Abstract

AbstractRaman and photoluminescence spectroscopic studies on oxygen vacancy‐induced structural disorder in Gd2Ti2O7‐δ single crystals grown by optical floating zone technique under argon atmosphere are reported. The oxygen vacancies in Gd2Ti2O7‐δ wafers decrease with thermal annealing in air atmosphere. The full width at half maximum of X‐ray diffraction rocking curve decreases from 245 to 157 arcsec and the optical transmittance increases from 23% to 87% (at 1000 nm) upon post growth thermal annealing. Raman spectroscopic studies reveal a monotonic increase in intensity of O–Gd–O (Eg) and Ti–O (A1g) stretching modes with thermal annealing. Since these modes are associated with modulation of oxygen x parameter which is sensitive to Ti–O octahedron distortion, the increase in Raman intensity indicates an improvement in structural ordering of oxygen sub‐lattice in Gd2Ti2O7‐δ. Moreover, the photoluminescence studies also corroborate the Raman analysis in terms of reduction of structural defects associated with oxygen vacancies as a function of thermal annealing. This study demonstrates the effectiveness of using Raman spectroscopy to probe the structural disorder in Gd2Ti2O7‐δ crystals.