Abstract
Thin films of zinc-rich Zn x Cd 1− x Se were grown on GaAs substrate using metal-organic-chemical-vapor-deposition (MOCVD) technique. Bound-longitudinal-optical (B-LO) phonon modes in the first-order and higher-order Raman spectra of Zn x Cd 1− x Se have been observed for the first time. Presence of these phonon modes are ascribed to impurities in the sample incorporated from the substrate. The modes are explained within the purview of a model used earlier for bound modes in GaP. Photoluminescence spectroscopy also reveals a deep energy band which suppresses the near band edge emission for x = 0.8, an alloy composition for which B-LO phonons are observed.
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