Abstract
A field-effect transistor JFET has been fabricated on a GaAs substrate using Liquid Phase Epitaxy. The structure involves two epitaxial layers of n-GaAs for the channel and p-Ga0.6Al0.4As for the gate. One advantage of the device is that the fabrication process requires only few steps. The design of the device, the fabrication technology and the I ( V ) characteristics are described. A transconductance value over 12 mA/V has been achieved. The transistor have shown a threshold voltage of - 4.6 V and mobility reaching 3 850 cm2/V.s. The results on the previous device will be applied to the fabrication of GaAlAs-GaAs monolithic integration of a photodiode and FET.
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