Radiophotoluminescence of Cu-doped silica glass derived from phase-separated sodium borosilicate glass

Yuya Takada,Takashi Wakasugi,Takeshi Saito,Kohei Kadono,Arifumi Okada,Atsushi Kinomura,Nobuyuki Ichinose,Keigo Yamamoto

doi:10.1063/5.0044309

Yuya Takada, Takashi Wakasugi + Show 6 more

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https://doi.org/10.1063/5.0044309

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Journal: AIP Advances	Publication Date: Mar 1, 2021
Citations: 2	License type: cc-by

Affiliation: Kyoto Institute of Technology, Kyoto University

Abstract

Radiophotoluminescence, one of the most interesting phenomena induced in materials by ionizing radiation, is expected to be applied for radiation measurements in various fields. The radiophotoluminescence of silica glasses doped with a small amount of copper was investigated after exposure to x rays and 60Co γ rays. The Cu-doped silica glasses were prepared from porous silica glass, obtained from a phase-separated borosilicate glass, through impregnation of the porous glass in Cu(NO3)2 solutions and sintering it. Among various types of defects generated in the glass by the irradiation, boron oxygen hole centers (BOHCs), i.e., holes trapped in oxygen bonded to fourfold-coordinated boron, were observed in electron spin resonance spectra. Before irradiation, a photoluminescence band attributed to the 3d94s1 → 3d10 transition of Cu+ ions was observed at 2.5 eV. The luminescence intensity increased remarkably after irradiation, and in addition, a new luminescence band at 2.1 eV appeared. The intensities of both bands increased proportionally with the irradiation dose. This was due to the conversion of Cu2+ to Cu+ ions by the capture of electrons generated by the irradiation. The luminescent decay was measured, which revealed that the lifetimes of the 2.5-eV and 2.1-eV emissions were 38 µs and 125 µs, respectively. The induced photoluminescence increased after heat treatment up to a temperature of 300 °C and decreased above 350 °C. The effects of heat treatment on the photoluminescence after irradiation and the thermal stability are discussed for BOHCs. A heat treatment of above 500 °C returned the glass near its initial state before irradiation.

Highlights

Radiophotoluminescence (RPL) or radiation-induced photoluminescence phenomena are due to emissions from luminescent centers that are generated in materials by exposure to ionizing radiation.[1]
Among various types of defects generated in the glass by the irradiation, boron oxygen hole centers (BOHCs), i.e., holes trapped in oxygen bonded to fourfold-coordinated boron, were observed in electron spin resonance spectra
We investigated the photoluminescence of Cudoped silica glass (Cu-SG) before and after exposure to x rays and γ rays

Summary

Introduction

Radiophotoluminescence (RPL) or radiation-induced photoluminescence phenomena are due to emissions from luminescent centers that are generated in materials by exposure to ionizing radiation.[1]. Silver-activated phosphate glasses are well known for exhibiting prominent RPL.[2,3]. Exposure to ionizing radiation, such as x rays and γ rays, generates electron–hole pairs in the glass. The RPL centers are stable at room temperature, and the luminescence does not disappear due to irradiation by the excitation light used for luminescence. This can be an advantage for dosimeters, compared with those based on thermal- or opticalstimulated luminescence, in which the luminescent centers disappear during emission.[2,3]

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