Abstract
Experiments aimed at the deposition of an intermediate buffer layer between Si and high- T c superconductor films were undertaken. The results of the preparation of yttria stabilized zirconia (YSZ) thin films by planar rf magnetron sputtering of a mozaic single crystalline target on polished undoped Si(100) substrates are reported. The films were polycrystalline with about a 30 nm grain size and preferentially (100)-oriented in the range of substrate temperatures of 800–880° C. These layers promoted c-axis oriented growth of YBaCuO laser-deposited films. No chemical reactions between the buffer layer and the high- T c superconductor were observed.
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