Abstract
A noble sputter with radical step coverage improvement using directional beam target technology is presented. Sidewall non-uniformity is ±17% for 6:1 aspect ratio trench, which is a drastic improvement from the compared profiles of 300mm Endura CuBS PVD (SIP EnCoRe II Cu) ±45.5% and INOVA® NExT (HCM® IONX™ XL) ±40.3% without sacrificing other deposition characteristics. The technology can be scaled through proper ratio of DBT to meet future generation Cu technology. The system is also relatively simple configuration and is a good alternative solution.
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