Abstract
Photoluminescence (PL) spectra of beryllium δ-doped GaAs∕AlAs multiple quantum wells are studied over a range of doping concentrations. Possible mechanisms for carrier recombination, both above and below the Mott metal-insulator transition, are discussed. In 15nm width Be δ-doped GaAs∕AlAs quantum wells, it is found that the Mott transition can be observed if the acceptor concentration (NBe)⩾3×1012cm−2. At doping concentrations near the Mott transition band the PL spectra are dominated by excitons-bound-to-acceptor impurity recombinations. Above the Mott transition, the radiative recombination of free electrons with a two-dimensional hole gas is found to be the dominant recombination mechanism.
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