Abstract
We investigated the excitonic or free-carrier nature of lasing in ZnCdSe/ZnSe quantum wells through stimulated emission measurements in high magnetic field and by pump–probe nonlinear transmission. A free-exciton to free-carrier gas-phase transition with increasing photoinjected density was found to determine the recombination mechanism responsible for lasing. A self-consistent theory based on the mass-action law, including many-body renormalization of the exciton binding energy and of the hot-carrier effects, was used to extract the phase diagram of the exciton–plasma gas from the pump–probe experiments. In deeper wells, exciton localization at sample inhomogeneities is demonstrated by time-resolved photoluminescence experiments. Correspondingly, the exciton to free-carrier phase transition does not change the dominant excitonic character of lasing, which reflects the increasing screening threshold of localized excitons.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
