Abstract
We present a theoretical analysis of radiative recombination process in active layers of blue/green InGaN-based light emitting diodes (LEDs) in the framework of a quantum disk model. Taking the structural and compositional inhomogeneity and the finite subband-states effects into account we modify the optical absorption and energy relaxation equations for quantum-disk systems. The carrier relaxation dynamic process and related time-dependent photoluminescence spectra are calculated numerically. Our results show that the quantum-disk model can interpret the main optical properties of InGaN-based LEDs reasonably.
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