Radiative recombination in zinc sulfide under conditions of high-temperature irradiation with electrons

Abstract

Radiation-induced defect-formation processes depend both on the starting defectiveness of the crystals and on the conditions of irradiation. An important factor, determining the behavior of radiation-induced defects, is the irradiation temperature. In this connection there is great interest in high-temperature (HT) or hot irradiation. The interstitial atoms and vacancies arising during irradiation exhibit especially high mobility, particularly at high temperatures, which intensify the competing processes of annealing and complex formation with the participation of radiation-induced defects. Studies of radiation-induced defect formation with HT irradiation of germanium and silicon have established some characteristics of the processes occurring here. However, we do not know of any data on HT irradiation of semiconductor compounds of the A/sup II/B/sup VI/ type.