Radiative Recombination in the Cu(In,Ga)Se2 Thin Films Irradiated with Hydrogen Ions

Abstract

The irradiation-induced effects in Cu(In,Ca)Se2 thin films after irradiation with hydrogen ions with dose of [Formula: see text][Formula: see text]cm[Formula: see text] and different energies in the range of 2.5–10[Formula: see text]keV were studied. Irradiated and nonirradiated thin films were investigated by low-temperature (4.2[Formula: see text]K) photoluminescence and photoluminescence excitation methods. The appearance of intense bands at [Formula: see text][Formula: see text]eV and 0.77[Formula: see text]eV in the photoluminescence spectra may be related to radiative recombination on the irradiation-induced defects with deep energy levels in the bandgap of Cu(In,Ca)Se2 solid solutions. A possible nature of these defects and process of radiative recombination are discussed.