Radiative Recombination in Semiconductors; Possibility of the Amplification and Generation of Light Using Semiconductors

Abstract

The direct recombination of an electron and a hole accompanied by photon emission, as well as radiative electron transitions to the local levels of defects or impurities, are frequently processes of the higher order. This applies to germanium and silicon where the overall recombination rate is governed by non-radiative transitions. Nevertheless, investigations of the spectra of recombination radiation, first detected by O. V. Losev in silicon carbide [1], have yielded important information on the band structure, on the energy levels of impurities and defects, and on the crystal lattice vibrations of germanium, silicon, and other semiconductors. Recently, it has been found that the relative probability of radiative recombination is close to unity in semiconductors with a narrow forbidden band, such as indium antimonide and lead sulfide.