Abstract
We report on the defect-assisted radiative recombination of photogenerated electrons and holes in GaAs quantum wells (QWs) during the transport by surface acoustic waves (SAWs). The studies were performed by detecting the spatial distribution of the photoluminescence (PL) with a resolution of a few micrometers. Under a SAW, a high PL intensity is observed on spatially localized spots along the SAW propagation path. This high PL intensity is attributed to recombination of the carriers, which are transported by the SAW, induced by charged defects located on or close to the QW plane.
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