Abstract
Monocrystalline CdTe/MgCdTe double-heterostruc-tures (DHs) grown on lattice-matched InSb substrates have achieved remarkable carrier-lifetimes up to 3.6 μs recently. In this paper, external luminescence quantum efficiencies ${\eta _{{\rm{ext}}}}$ of CdTe/MgCdTe DHs are determined using photoluminescence quantum efficiency measurements. The external luminescence quantum efficiency of a 1-μm-thick CdTe/MgCdTe DH with indium-doped n-type at 1 × 1017 cm−3 is measured to be 3.0% under one-sun condition, i.e., a carrier injection current density of ∼30 mA/cm2, which corresponds to a spontaneous emission quantum efficiency ${\eta _q}$ of 90 ± 4%. Such a high efficiency gives an implied open-circuit voltage V oc, or quasi-Fermi-level splitting of 1.13 V. The ${\eta _q}$ of unintentionally doped DH samples with optimum barrier layers can be over 95% at one-sun injection level.
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