Abstract
The steady-state photoluminescence (PL) of CsPbBr3 films with varying thicknesses was studied under light-soaking on semiconductive and insulating contacts, showing reversible changes in PL, entirely dependent on the nature of the contact and film thicknesses. The PL at 50–100 nm CsPbBr3 on TiO2 increased, and decreased in thicker layers, with no thickness-dependent PL in CsPbBr3 on glass/Al2O3. These observations are described using a spatial charge distribution model which interprets the migration of Br– and VBr+ under light-soaking as suppressing electron injection into the TiO2 due to upward band bending, enhancing PL at the interface and nonradiative recombination further away from it.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
