Abstract
Radiative lifetimes and time-resolved spectra have been obtained for high-purity n-type gallium arsenide at low temperatures. The ∼ 1.51-eV bands, generally associated with the annihilation of free and bound excitons, decay very rapidly, τ < 15 nsec. The 1.49-eV band, variously described as donor-acceptor recombination or as a free-to-bound recombination, has a longer nonexponential decay. For this band, the time-resolved spectra show a steady shift to lower energy as the delay after the pulse is lengthened. The conclusion drawn is, that the 1.49-eV band arises from a D-A recombination process.
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