Abstract
We report the results of studies on the concentration dependence of the cathodoluminescence of ZnTe:Al, Ga, In crystals in the temperature range 4.2–300 K. A band with maximum at ∼2.2 eV and half-width of the order of 70 MeV and a band with maximum at ∼2.36 eV and half-width ∼1 MeV appear in ZnTe:Al crystals at 4.2 K. In the temperature range 40–70 K we detected the structure of the first band such that the separation of the maxima of the resolved bands corresponded to the energy of an LO phonon. A band with maximum at ∼1.8 eV was found to appear in ZnTe:Ga crystals at 4.2 K and a band with maximum at ∼1.9 eV appeared in ZnTe:In crystals at that temperature. The donor activation energies were determined to be 0.11, 0.30, and 0.25 eV, respectively, for aluminum, gallium, and indium.
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