Abstract
We present a theory of the radiative decay of excitons bound to neutral donors and acceptors in direct-gap semiconductors within the spherical-effective-mass approximation. The calculation is carried out using a three-particle wave function which incorporates Pauli exchange and important interparticle correlation effects over the entire range of electron- to hole-mass ratios. Thus donor-and acceptor-bound excitons are treated within the same framework. Radiative lifetimes are studied and are found to be particularly sensitive to the interparticle distance between electron and hole for all mass ratios of physical interest. Calculations are carried out for the radiative decay rates of bound excitons in a number of materials and comparison is made with the measured radiative lifetimes of both donor- and acceptor-bound excitons in GaAs, InP, and CdS.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
