Abstract
By time-resolved and temperature-dependent photoluminescence we investigated GaInN/GaN multiple quantum wells with different well width. Photoluminescence line position, width and intensity were analysed together with photoluminescence decay times for a temperature range between 5 to 300 K. Radiative and nonradiative recombination times and activation energies were derived from decay times and quantum efficiency. We found field effects due to piezoelectric polarisation as well as localization affect the recombination processes; the latter only effective for temperatures below 100 K. Both, radiative and nonradiative recombination were found dependent on the piezoelectric field.
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