Abstract
The theory of the multiphonon and radiative recombination of a selftrapped exciton on the interface of a sil� icon nanocrystal in a SiO2 matrix is developed. Selftrapped excitons play a key role in the hot carrier dynam� ics in nanocrystals under photoexcitation. The ratio of the probabilities of the multiphonon and radiative recombination of the selftrapped exciton is estimated. The probabilities of exciton tunnel transition from the selftrapped state to a nanocrystal are calculated for na nocrystals of various sizes. The infrared range spec� trum of the luminescence of the selftrapped exciton is obtained.
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