Abstract
Time-resolved investigation of the level anticrossing effect in exciton emission is first usedto determine separately the radiative and nonradiative indirect bound exciton lifetimes in asemiconductor crystal using GaSe as an example. A theoretical treatment of theexperimental level anticrossing signal is carried out for different instances of theindirect bound exciton lifetime. The indirect bound exciton radiative lifetimeτr = 4.8 µs is found to be about five times shorter than the nonradiative lifetimeτ0 = 19 µs and about two orders of magnitude longer than the radiative lifetimeof direct bound excitons in the same compound. Within the two-levelscheme, the value of the indirect bound exciton spin relaxation timeT1 is assessedto be 100 µs.
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