Abstract
Tensile germanium microstrips are candidate as gain material in Si-based light emitting devices due to the beneficial effect of the strain field on the radiative recombination rate. In this work, we thoroughly investigate their radiative recombination spectra by means of micro-photoluminescence experiments at different temperatures and excitation powers carried out on samples featuring different tensile strain values. For sake of comparison, bulk Ge(001) photoluminescence is also discussed. The experimental findings are interpreted in light of a numerical modeling based on a multi-valley effective mass approach, taking in to account the depth dependence of the photo-induced carrier density and of the self-absorption effect. The theoretical modeling allowed us to quantitatively describe the observed increase of the photoluminescence intensity for increasing values of strain, excitation power, and temperature. The temperature dependence of the non-radiative recombination time in this material has been inferred thanks to the model calibration procedure.
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