Abstract
The radiation-induced photoluminescence (PL) properties of Bi/Al-codoped silica optical fibers were investigated. The Bi/Al-related materials were doped into fiber core via atomic layer deposition. The pristine fiber samples were irradiated with different doses, and its absorption and PL properties were studied. A new absorption peak appeared at approximately 580 nm, and the intensity of absorption peaks is increased with the increasing of radiation doses. When the fiber samples were excited with a 532 nm pump, the intensity of the near infrared fluorescence decreased lightly. However, when the fiber samples were excited with a 980 nm pump the intensity of the fluorescence increased significantly with the increase of radiation doses (0-2.0 kGy). The intensity of fluorescence decreased when the radiation doses were increased up to 3.0 kGy. furthermore, the fluorescence intensity of the 1410 nm band increased much more than that the 1150 nm band. In addition, the microstructural characteristics of the Bi/Al-codoped silica optical fibers were analyzed using electron spin resonance (ESR). Many radiation-induced defect centers were present, and the intensity of the ESR signals also increased with the increase of radiation doses. The photoluminescence properties and microstructural characteristics were related in the radiated Bi-related silica optical fibers. A possible underlying mechanism for the radiation-induced photoluminescence enhancement process in the Bi/Al-doped silica fiber is discussed.
Highlights
Bismuth-doped optical fibers, as a promising active medium for amplifying and lasing in the 1.1-1.8 μm range [1,2,3,4], have been extensively studied, since their broadband near infrared (NIR) fluorescence properties were firstly reported in 2001 [1]
We investigated the effect of irradiation on the optical properties of Bi/Al-codoped silica optical fibers, and further reported the relationship between the radiation-induced defect centers and optical properties of the fiber
The intensity of the optical fiber absorption peaks at the 458, 510, 700 and 800 nm bands is clearly increased with the increase of the radiation doses (0-3.0 kGy)
Summary
Bismuth-doped optical fibers, as a promising active medium for amplifying and lasing in the 1.1-1.8 μm range [1,2,3,4], have been extensively studied, since their broadband near infrared (NIR) fluorescence properties were firstly reported in 2001 [1]. Shen et al [13] achieved an fluorescence enhancement by exposing Bi borosilicate glasses to Gamma-ray irradiation. The causes of the luminescence intensity changes in Bi-related silica optical fiber with gamma-ray irradiated have not been investigated. For the first time, we investigated the radiation-induced photoluminescence effect of Bi/Al-codoped silica optical fibers using the atomic layer deposition (ALD) method, and further reported the relationship between the radiation-induced optical properties and defect centers in Bi/Al-codoped silica fiber with gamma-ray radiation. The radiation-induced photoluminescence enhancement process was suggested. These findings help to provide deeper insight into the nature and formation mechanism of the PL properties in Bi-related silica optical fibers
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