Abstract
Concentration inhomogeneities in the trap system have been shown to be responsible for radiation-induced electric charging of regions in the bulk of dielectrics under irradiation. Formation of electrically charged regions is caused by difference in hopping mobility of charge carriers over traps and does not violate general electric neutrality of the system. Formation of negatively charged regions during irradiation results in intensity increase for F-centres band (415 nm) in radiation-induced luminescence (RIL) spectra of single crystal Al 2O 3. In ceramic Al 2O 3:Cr 3+, the radiation-induced negative charging of grain boundaries with respect to grain bulk takes place which is revealed in the intensity increase of Cr 3+ ion RIL band (690 nm), in spite of a constant intensity of this band in single crystal Al 2O 3:Cr 3+ under similar conditions. The idea of the radiation-induced electric charging due to concentration inhomogeneities in the trap system allows one, using the RIL method, estimating local charge density in grains of ceramic Al 2O 3:Cr 3+ and associated electric field. Under 8 MeV proton irradiation (dose rate up to 5 × 10 3 Gy/s), excessive positive charge in grains of ceramic Al 2O 3:Cr 3+ exceeds 10 4 Q/m 3, and associated electric field exceeds 10 6 V/m.
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