Abstract
Abstract In order to find the dislocation mechanisms responsible for radiation-induced creep, experiments on single crystals are proposed. Three possible mechanisms are considered : stress-induced preferential absorption of interstitials at Frank loops (SIPAL), or at edge dislocations (SIPAD), and climb-controlled glide of dislocations (CCG). dependence of radiation-induced creep on the single crystal orientation is derived for face-centred-cubie materials. It is shown that each mechanism gives rise to a distinct orientation dependence, and specific examples are worked out for uniaxial tension and for torsion of bar specimens. In addition, we discuss briefly the significance of single-crystal irradiation creep to polycrystalline behaviour.
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