Abstract
We report the results of Single Event Effect (SEE) and Total Integrated Dose (TID) testing of a very-low-noise six-channel electrometer Application Specific Integrated Circuit (ASIC) constructed through the MOSIS service using the ON Semiconductor C5N process. The ASICs were designed using Radiation Hard By Design (RHBD) layout rules, and TID mitigation strategies. This testing provides a verification that the device does not show latch-up behavior, and that performance is not unduly compromised by TID. The SEE testing, using heavy ions, took place at the Single Event Effects Facility at Texas A&M University using the 24.8~MeV/u beam with ions Ar, Kr, and Xe giving a range of Linear Energy Transfer (LET) at the device of 7.5-63.5 MeV cm2/mg. No latch-ups were seen even at an elevated temperature (30C). TID testing using protons was conducted at the Indiana University Cyclotron Facility on the Radiation Effects Research Program RERS2 beamline. Parts were tested to a total dose of 300 krad(Si). As these ASICs are constructed using CMOS technology there will be no Enhanced Low Dose Rate Sensitivity (ELDRS)
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