Abstract
The anisotropy of electrical conductivity in hexagonal TlInS2 crystals irradiated by γ-quanta is investigated. It is established that irradiation by low doses (~50 krad) gives rise to accumulation of radiation defects both in the tetrahedral space and in the layer plane. As a result, there is an increase in electrical conductivities σ⊥C and σ∥C. As the dose is increased (above 200 krad), more complex defects are formed due to interaction of the radiation defects with the inhomogeneities, thus reducing the increase of electrical conductivity in both directions.
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