Abstract
Capacitance-voltage (C-V) techniques have been used to examine the 10-keV x-ray radiation sensitivity of buried oxides that are created by the implantation of oxygen into silicon. Buried oxide to substrate interfaces have been studied by using samples implanted with different oxygen implant doses from a 100 mA-class implanter. Fiatband voltage (Vfb) shift for the buried oxide to the substrate interface has been used to monitor charge buildup as a function of radiation dose and applied electrical bias. The Vfb shift of the buried oxides indicate a oxide trapping behavior that is different than that of thermal oxides.
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